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Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
? BV DSS
? T J
I DSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
V GS = 0 V, I D = 250 μ A
V GS = 0 V, I D = –250 μ A
I D = 250 μ A, Ref. to 25 ° C
I D = –250 μ A, Ref. to 25 ° C
V DS = 16 V, V GS = 0 V
V DS = –16 V, V GS = 0 V
Q1
Q2
Q1
Q2
Q1
Q2
20
–20
13
–11
1
–1
V
mV/ ° C
μ A
I GSSF
Gate–Body Leakage, Forward
V GS = 12 V,
V GS = 12 V,
V DS = 0 V
V DS = 0 V
Q1
Q2
100
100
nA
I GSSR
Gate–Body Leakage, Reverse
V GS = –12 V, V DS = 0 V
V GS = –12 V, V DS = 0 V
Q1
Q2
–100
–100
nA
On Characteristics
(Note 2)
V GS(th)
Gate Threshold Voltage
Q1
V DS = V GS , I D = 250 μ A
0.5
0.9
1.5
V
Q2
V DS = V GS , I D = –250 μ A
–0.6
–1.0
–1.5
? V GS(th)
? T J
Gate Threshold Voltage
Temperature Coefficient
Q1
Q2
I D = 250 μ A, Ref. To 25 ° C
I D = –250 μ A, Ref. to 25 ° C
–3
–3
mV/ ° C
R DS(on)
Static Drain–Source
Q1
V GS = 4.5 V,
I D = 3.0 A
50
70
m ?
On–Resistance
Q2
V GS = 2.5 V, I D = 2.5 A
V GS = 4.5 V, I D = 3.0 A,T J =125 ° C
V GS = –4.5 V, I D = –2.2 A
V GS =– 2.5 V, I D = –1.8 A
V GS = – 4.5 V,I D =–2.2 A,T J =125 ° C
66
71
100
145
137
95
106
125
190
184
I D(on)
On–State Drain Current
Q1
V GS = 4.5 V,
V DS = 5 V
12
A
Q2
V GS = –4.5 V, V DS = –5 V
–6
g FS
Forward Transconductance
Q1
V DS = 5 V
I D = 2.5 A
10
S
Q2
V DS = –5 V
I D = –2.0A
6
Dynamic Characteristics
C iss
Input Capacitance
Q1
V DS =10 V, V GS = 0 V, f=1.0MHz
324
pF
Q2
V DS =–10 V, V GS = 0 V, f=1.0MHz
337
C oss
Output Capacitance
Q1
V DS =10 V, V GS = 0 V, f=1.0MHz
82
pF
Q2
V DS =–10 V, V GS = 0 V, f=1.0MHz
88
C rss
Reverse Transfer Capacitance Q1
Q2
V DS =10 V, V GS = 0 V, f=1.0MHz
V DS =–10 V, V GS = 0 V, f=1.0MHz
42
51
pF
Switching Characteristics
(Note 2)
t d(on)
Turn–On Delay Time
Q1
For Q1 :
5
10
ns
t r
Turn–On Rise Time
Q2
Q1
V DS =10 V,
V GS = 4.5 V,
I DS = 1 A
R GEN = 6 ?
9
7
18
14
ns
Q2
For Q2 :
12
22
t d(off)
t f
Turn–Off Delay Time
Turn–Off Fall Time
Q1
Q2
Q1
V DS =–10 V, I DS = –1 A
V GS = –4.5 V, R GEN = 6 ?
13
10
1.6
23
20
3
ns
ns
Q2
5
10
Q g
Total Gate Charge
Q1
For Q1 :
3.3
4.6
nC
Q2
V DS =10 V,
I DS = 3.0 A
3.7
Q gs
Q gd
Gate–Source Charge
Gate–Drain Charge
Q1
Q2
Q1
V GS = 4.5 V,
For Q2 :
V DS =–10 V,
V GS = –4.5 V,
I DS = –2.2 A
0.95
0.68
0.7
nC
nC
Q2
1.3
FDC6420C Rev C(W)
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